High performance scaled flash-type EEPROMs fabricated by in situ multiple rapid thermal processing

摘要

Flash-type EEPROMs were fabricated for the first time by in situ multiple rapid thermal processing (RTP) modules. In the paper, rapid thermal oxynitridation tunnel oxide (RTONO) formation followed by in situ arsenic (As)-doped floating gate polysilicon growth by rapid thermal chemical vapour deposition (RTCVD) were introduced. The flash cell indicates only 20% narrowing of the V/sub t/ window after 5*10/sup 4/ program/erase cycle stress. Moreover, there is a higher breakdown field of the ONO film on the floating-gate polysilicon film owing to extremely flat poly-Si surface. Thus, the in situ multiple RTP technology is the key for future flash memory fabrication processes.