Heavy oxynitridation technology for forming highly reliable flash-type EEPROM tunnel oxide films

摘要

For the first time, it is demonstrated that in flash-type EEPROMs, the endurance properties are dramatically improved by heavy oxynitridation (RTONO) of the tunnel oxide. The layer composition evaluated by SIMS measurement indicates that large amounts of N atoms (<10/sup 20/ atom/cm/sup 3/) pile up at the SiO/sub 2/-Si interface, and are distributed in the bulk SiO/sub 2/. In addition, the RTONO film reduces the number of hydrogen atoms, which are the origin of electron traps. This oxynitridation causes a decrease of both electron and hole traps in the tunnel oxide, resulting in an improvement of the threshold voltage narrowing.