METHOD FOR FORMATION OF OXIDE FILM,METHOD FOR FORMATION OF IMPROVED OXIDE FILM,METHOD FOR FORMATION OF HIGH-QUALITY OXIDE FILM AND METHOD FOR FORMATION OF TUNNEL AND GATE OXIDEFILM

摘要

PURPOSE: To manufacture a high-quality oxide film for a semiconductor device by forming a region which has nitrogen in some concentration in an oxide layer by exposing the oxide layer to atmosphere including mainly NO. CONSTITUTION: Annealing is performed for a time in the range of about 10 sec. to three min. at a temperature of about 800 deg.C to about 1050 deg.C in atmosphere including NO by 5 %, preferably, about 50% to 100%, using a standard diffusion tube. By this NO annealing, an oxide film of about 2 is made additionally, consequently it comes to the final thickness of about 62 . The final annealing is performed with the diffusion tube, too, and the temperature range in NO atmosphere is about 800 deg.C to about 1000 deg.C for about 15 min. The film growth becomes the additional growth of about 2 . Hereby, the completeness of a tunnel oxide film 220 is improved, and a high-quality oxide film for a semiconductor device can be manufactured.