SOURCE REAGENT COMPOSITION FOR CVD FORMATION OF Zr/Hf DOPED GATE DIELECTRIC AND HIGH DIELECTRIC CONSTANT METAL OXIDE THIN FILMS AND METHOD OF USING SAME

摘要

Chemical vapor deposition (CVD) precursor composition is used to form Zr/Hf doping grid media, the metal-oxide film of ferroelectricity or high dielectric constant (high-k). In one embodiment, including metal precursor composition has general formula for M & bgr; ) 2 (OR) 2 dione compounds, wherein M is Zr or Hf, and R is tert-butyl. Composition can also include that solvent medium is selected from ether, glyme class, tetraglyme, amine, polyamines, alcohol, glycol, aliphatic hydrocarbon solvent, aromatic hydrocarbon solvent, cyclic ethers, and the combination of two kinds of compatibility or more kinds of aforementioned substances.