Thin Film Formation of Transparent Conductive Oxides by Solution-Based Mist Deposition Method toward Hybrid Device Applications

摘要

Transparent conductive oxides, gallium-doped zinc oxide (ZnO:Ga) and tin-doped indium oxide (ITO), were fabricated by a solution-based ultrasonic spray-assisted mist deposition technique. The ZnO:Ga films showed a good c-axis orientation perpendicular to the substrate and achieved low resistivity of 2.3 × 10~(-3) Ω cm with high transmittance in wide wavelength region. ITO films have lower resistivity of 1.4 × 10~(-4) Ω cm and high transmittance over the wavelength of 300 nm.