1/f noise in self-aligned Si/SiGe heterojunction bipolar transistor

Plana R.; Escotte L.

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1/f noise in self-aligned Si/SiGe heterojunction bipolar transistor

机译：自对准Si / SiGe异质结双极晶体管的1 / f噪声

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摘要

The first characterization of the low-frequency noise in a self-aligned Si/SiGe heterojunction bipolar transistor (HBT) is reported. The observed low-frequency noise exhibits a pure 1/f shape, probably related to carrier number fluctuations at the pseudomorphic emitter-base heterointerface.

机译：报告了自对准Si / SiGe异质结双极晶体管（HBT）中低频噪声的第一个特征。观察到的低频噪声表现出纯的1 / f形状，可能与假晶发射极-基极异质界面处的载流子数量波动有关。

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《IEEE Electron Device Letters》 |1995年第2期|P.58-60|共3页
作者
Plana R.; Escotte L.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;
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1/f noise in self-aligned Si/SiGe heterojunction bipolar transistor

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