Negative differential resistance of AlGaAs/GaAs heterojunction bipolar transistors: influence of emitter edge current

摘要

We report an electrical characterisation of AlGaAs/GaAs heterojunction bipolar transistors over a temperature range of 250 to 400 K in which the emitter edge current contribution to the negative differential output resistance (NDR) effect is determined. A quantitative analysis of the DC gain versus temperature and perimeter to area ratio indicates that emitter edge current has a major influence on the NDR magnitude.