4H-SiC MESFET's with 42 GHz f/sub max/

摘要

We report for the first time the development of state-of-the-art SiC MESFETs on high-resistivity 4H-SiC substrates. 0.5 /spl mu/m gate MESFETs in this material show a new record high f/sub max/ of 42 GHz and RF gain of 5.1 dB at 20 GHz. These devices also show simultaneously high drain current, and gate-drain breakdown voltage of 500 mA/mm, and 100 V, respectively showing their potential for RF power applications.