circuit stability; power MESFET; microwave power transistors; millimetre wave power transistors; semiconductor device measurement; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; passivation; 4H-SiC channel recessed M;
机译:具有部分重掺杂沟道的改进的双凹P缓冲4H-SiC MESFET
机译:具有双凹p缓冲层的改进的多凹4H-SiC MESFET
机译:具有凹陷的源/漏漂移区的改进的双凹陷4H-SiC MESFET结构
机译:通道嵌入了4H-SIC MESFET,具有40GHz的14.5GHz和f {sub}(max)的f {sub} t
机译:单通道压缩应变下具有沟道的p沟道MOSFET的凹陷硅锗结参数优化研究。
机译:具有部分低掺杂沟道的改进型4H-SiC MESFET
机译:4H-SIC凹槽型磁架DC特性研究