High-speed InGaP/GaAs heterojunction bipolar transistors with buried SiO/sub 2/ using WSi as the base electrode

摘要

High-speed InGaP/GaAs heterojunction bipolar transistors (HBT's) with a small emitter area are described. WSi is used as the base electrode to fabricate HBT's with a narrow base contact width and a buried SiO/sub 2/ structure. An HBT with an emitter area of 0.8/spl times/5 /spl mu/m exhibited an f/sub T/ of 105 GHz and an f/sub max/ of 120 GHz. These high values are obtained due to the reduction of C/sub BC/ by using buried SiO/sub 2/ with a narrow base contact width, indicating the great potential of GaAs HBT's for high-speed and low-power circuit applications.