1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

摘要

In this letter, we report the full development of 1.2 kV Trench IGBT's with ultralow on-resistance, latch-up free operation and highly superior overall performance when compared to state of the art IGBT's. The minimum forward voltage drop at the standard current density of 100 A/cm/sup 2/ was 1.1 V for nonirradiated devices and 2.1 V for irradiated devices. The maximum controllable current density was in excess of 1000 A/cm/sup 2/.