High voltage (<1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

摘要

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (<1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.