Novel 4H-SiC BJT utilizing floating buried layer in base for high current gain, high current gain stability and high breakdown voltage

摘要

Purpose - The purpose of this paper is to present a novel structure of 4H-SiC bipolar junction transistor (BJT) to realize high current gain, high current gain stability, and high breakdown voltage. Design/methodology/approach - A novel structure of 4H-SiC BJT with floating buried layer in the base epilayer is presented. The simulation and optimization are done using the TCAD tool.rnFindings - This novel structure is increasing the current gain effectively, at the same time, the current gain stability and breakdown voltage are higher comparing with the conventional structure.rnOriginality/value - The paper proposes a new "4H-SiC FBL-BJT" with high current gain, high current gain stability and high breakdown voltage.