Threshold voltage and subthreshold slope of multiple-gate SOI MOSFETs

摘要

The subthreshold swing and threshold voltage characteristics of multiple-gate SOI transistors have been numerically simulated. These devices behave like cylindrical, surrounding gate devices, with the exception of the corner inversion effect. The corner inversion effect is, however, shown to be negligible if the devices are fully depleted devices or if the gate insulator thickness is small enough.