Q-Factor Characterization of RF GaN-Based Metal-Semiconductor-Metal Planar Interdigitated Varactor

摘要

We report the characterization of quality (Q) -factor of RF metal-semiconductor-metal (MSM) planar interdigitated varactors fabricated by standard AlGaN/GaN HEMT process. The MSM varactors have wide tuning range and exhibit high quality-factor at both the maximum and minimum capacitance values. The fundamental limitation of the Q-factor in the medium capacitance range is also revealed. The elimination of ohmic contact resistance in the MSM varactor configuration pushed up the peak Q-factor to 92 at 0.5 GHz and 41 at 1.1 GHz. The operation of the MSM varactor is modeled by a physical equivalent circuit, with which the dependence of the Q-factor over the entire tuning voltage range can be explained.