A New Lateral-IGBT Structure With a Wider Safe Operating Area

摘要

A new lateral insulated gate bipolar transistor (LIGBT) for junction-isolated technologies is presented. The nLIGBT is integrated in an existing smart power technology without changing any process layers. The technology has a 0.35-$muhbox{m}$ CMOS core and is extended with five process layers in order to handle up to 80 V. The drift region of the nLIGBT is completely surrounded by $hbox{p}^{+}$ regions, creating a very effective hole bypass or diverter structure. This yields an LIGBT with a very wide safe operating area. The device has a breakdown voltage of 75 V and is able to operate up to 47 V (dc) when the gate is fully open. Furthermore, this device turns off without current tail, resulting in extremely fast turn-off times, which are solely determined by the voltage-rise phase. A true competitor for the quasi-vertical n-type drain extended metal oxide semiconductor (nDEMOS) in this technology is created.