Degradation of Laser-Crystallized Laterally Grown Poly-Si TFT under Dynamic Stress

摘要

This letter studies the electrical degradation of laterally grown polycrystalline silicon thin-film transistors (poly-Si TFTs) under dynamic voltage stress. The experimental results show the serious electrical degradation of poly-Si TFTs with a protruding grain boundary. The concentration of the electric field in the protrusion region was verified by capacitance–voltage measurements and simulation of the device characteristics. These results reveal that more electrons are induced at the grain boundary of the poly-Si channel because of the relatively high electric field in the protrusion region. Based on these data, this letter proposes a model to explain the enhanced electrical degradation of poly-Si TFTs with a protruding grain boundary, generated by laser-crystallized lateral growth technique.