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LATERALLY CRYSTALLIZED TFTs AND METHODS FOR MAKING LATERALLY CRYSTALLIZED TFTs
LATERALLY CRYSTALLIZED TFTs AND METHODS FOR MAKING LATERALLY CRYSTALLIZED TFTs
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机译:横向结晶的TFT和制造横向结晶的TFT的方法
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摘要
A technique to achieve vertical integration of CMOS devices. A Germanium seed (20) is deposited in hole (16) in an insulating oxide layer (14) on top of an amorphous silicon film (12). The hole may be over the source and/or drain regions of a thin film transistor. The structure is annealed causing lateral crystallization resulting in the formation of large grain polysilicon.
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