Fabrication of Poly-Si TFT by Al-induced Lateral Crystallization at Low Temperature

摘要

Using a new low-temperature process (<600 ℃), the poly-Si TFT was fabricated by metal-induced lateral crystallization (MILC). An ultrathin aluminum layer was deposited on a-Si film and selectively formed by photolithography. The films were then annealed at 560 ℃ to obtain laterally crystallized poly-Si film, which is used as the channel area of a TFT. The poly-Si TFT showed an on/off current ratio of higher than 1×10 6 at a drain voltage of 5 V. The electrical properties are much better than TFT fabricated by conventional crystallization at 600 ℃.