Electrical Characterization of $hbox{ZrO}_{2}/hbox{Si}$ Interface Properties in MOSFETs With $hbox{ZrO}_{2}$ Gate Dielectrics

摘要

MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS, IDS-VGS , and gated diode characteristics were analyzed to investigate the ZrO2/Si interface properties. The interface trap density (D it) was determined to be about 7.4times1012 cm -2middoteV-1 using subthreshold swing measurement. The surface-recombination velocity (s0) and the minority carrier lifetime in the field-induced depletion region (tau 0,FIJ) measured from the gated diodes were about 3.5times10 3 cm/s and 2.6times10-6 s, respectively. The effective capture cross section of surface state (sigmas) was determined to be about 5.8times10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made