Is SOD Technology the Solution to Heating Problems in SOI Devices?

摘要

In this letter, we present our investigations on heating effects in Si on diamond and Si on AlN transistors, using a coupled Monte Carlo/thermal moment expansion simulator. Both technologies are considered viable alternatives to silicon-on-insulator devices due to the fact that diamond and AlN have significantly higher thermal conductivities than $hbox{SiO}_{2}$. This fact is beneficial in the following two aspects, as demonstrated in this letter: 1) It leads to a significant reduction in the thermal degradation of the device electrical characteristics, and 2) it allows a more uniform distribution of temperature in the device active region, which, in turn, enhances heat removal.