Optimized in situ heating control on a new MOS device structure in 28nm UTBB FD-SOI CMOS technology

摘要

The purpose of this study is to introduce preliminary results on in situ heating control within new thin silicon film N-MOSFET device in 28 nm FD-SOI UTBB high-k metal gate technology. This evaluation is based on 3D TCAD simulations with classical electro-thermal physical models and on silicon sample measurements. It highlights that the device is functional and could be used for low and ultra-low temperature design solutions in harsh application environment.