Complementary Logic Gates and Ring Oscillators on Plastic Substrates by Use of Printed Ribbons of Single-Crystalline Silicon

摘要

CMOS inverters and three-stage ring oscillators were formed on flexible plastic substrates by transfer printing of p-type and n-type single crystalline ribbons of silicon. The gain and the sum of high and low noise margins of the inverters were as high as $sim$150 and 4.5 V at supply voltages of 5 V, respectively. The frequencies of the ring oscillators reached 2.6 MHz at supply voltages of 10 V. These results, as obtained with devices that have relatively large critical dimensions (i.e., channel lengths in the several micrometer range), taken together with good mechanical bendability, suggest promise for the use of this type of technology for flexible electronic systems.