Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers

摘要

In this letter, we report the first experimental demonstration of wafer-scale ambipolar field-effect transistor (FET) on Si (111) substrates by synthesizing a graphene layer on top of 3C–SiC(111)/Si(111) substrates. With lateral scaling of the source–drain distance to 1 $mu hbox{m}$ in a top-gated layout, the on-state current of 225 $muhbox{A}/muhbox{m}$ and peak transconductance of $>hbox{40} muhbox{S}/muhbox{m}$ were obtained at $hbox{Vds} = hbox{2} hbox{V}$, which is the highest performance of graphene-on-Si FETs. The peak field-effect mobilities of 285 $ hbox{cm}^{2}/hbox{Vs}$ for holes and 175 $hbox{cm}^{2}/ hbox{Vs}$ for electrons were demonstrated, which is higher than that of ultra-thin-body SOI (n, p) MOSFETs.