GRAPHENE BENDING TRANSISTOR COMPRISING GRAPHENE MANUFACTURING METHOD, MANUFACTURING METHOD OF GRAPHENE WITH ETCHED GRAPHENE ATOMIC LAYER, AND WAFER COMBINATION METHOD, AND GRAPHENE BENDING TRANSISTOR

摘要

The present invention is a manufacturing method of a transistor for adjusting one or more work functions using graphene comprising an entirely or partially selected gelation method to select one or more thing among one or more bending modifications and position movements.;COPYRIGHT KIPO 2016