首页> 外文OA文献 >Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

【2h】

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

机译：原子层沉积的HFO2薄膜的厚度缩放及其在晶圆级石墨烯隧道隧道晶体管的应用

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Seong-Jun Jeong; Yeahyun Gu; Jinseong Heo; Jaehyun Yang; Chang-Seok Lee; Min-Hyun Lee; Yunseong Lee; Hyoungsub Kim; Seongjun Park; Sungwoo Hwang;
展开▼
作者单位

展开▼
年度 2016
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors [J] . Seong-Jun Jeong, Yeahyun Gu, Jinseong Heo, Scientific reports. . 2016,第1期

机译：原子层沉积的HFO2薄膜的厚度缩放及其在晶圆级石墨烯隧道隧道晶体管的应用
2. Versatile Wafer-Scale Technique for the Formation of Ultrasmooth and Thickness-Controlled Graphene Oxide Films Based on Very Large Flakes [J] . Azevedo Joel, Campidelli Stephane, He Delong, ACS applied materials & interfaces . 2015,第38期

机译：基于超大薄片的超薄和可控厚度氧化石墨烯薄膜形成的通用晶圆级技术。
3. Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al2O3/HfO2 for Low-Power Logic Applications [J] . Progress in Artificial Intelligence . 2020,第1期

机译：用Al2O3 / HFO2对低功率逻辑应用的IN0.53GA0.47AS三栅极金属氧化物 - 半导体 - 效应 - 晶体管对IN0.53GA0.47AS三栅极金属氧化物 - 半导体 - 效应晶体管的影响
4. High quality wafer-scale CVD graphene on molybdenum thin film for sensing application [C] . Yelena Grachova, Sten Vollebregt, Andrea Leonardo Lacaita European Conference on Solid-State Transducers . 2015

机译：高品质晶圆级CVD石墨烯薄膜，用于传感应用
5. Optimization of The Fabrication Condition of RF Sputtered ZnO Thin Film Transistors with High-k HfO2 Gate Dielectric. [D] . Thapaliya, Prem S. 2016

机译：高k HfO2栅介质的射频溅射ZnO薄膜晶体管制造条件的优化。
6. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors [O] . Seong-Jun Jeong, Yeahyun Gu, Jinseong Heo, -1

机译：原子层沉积HfO2薄膜的厚度定标及其在晶圆级石墨烯隧穿晶体管中的应用
7. Effects of Equivalent-Oxide-Thickness and Fin-Width Scaling on In0.53Ga0.47As Tri-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistors with Al2O3/HfO2 for Low-Power Logic Applications [O] . Tae-Woo Kim 2019

机译：用Al2O3 / HFO2对IN0.53GA0.47AS三栅极金属氧化物 - 半导体 - 效应 - 晶体管对低功率逻辑应用的影响等效氧化物厚度和翅片宽度缩放的影响
8. Wafer-scale Reduced Graphene Oxide Films for Nanomechanical Devices [R] . Robinson, J. T., Zalalutdinov, M., Baldwin, J. W., 2008

机译：用于纳米机械器件的晶圆级还原氧化石墨烯薄膜

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

著录项

引文网络

相似文献

相关主题

期刊订阅