Cross-Coupling Low-Triggering Dual-Polarity CLTdSCR ESD Protection in CMOS

摘要

This letter reports a novel ultrafast cross-coupling low-triggering dual-polarity SCR (CLTdSCR) ESD protection network in a CMOS. The measurement shows ultralow and tunable triggering voltage $V_{t1} sim hbox{3.83} hbox{V}$, low discharging resistance $R_{rm on} sim hbox{0.26} Omega$, low leakage $I_{rm leak} sim hbox{0.36} hbox{nA}$, low noise figure $NF sim hbox{0.2} hbox{dB}$, low parasitic capacitance $C_{rm ESD} sim hbox{150} hbox{fF}$, and fast effective response $t_{1} sim hbox{100} hbox{ps}$. It achieves a very high $sim!! hbox{7} hbox{V}/muhbox{m}^{2}$ ESD protection level.