High On/Off-Current Ratio in Bottom-Gated Microcrystalline-Silicon Thin-Film Transistors With Vertical-Offset Structure

摘要

The high on/off-current ratio of microcrystalline-silicon thin-film transistors (TFTs) with vertical offset was demonstrated. These TFTs have a bottom-gate structure and offset regions formed along the side surfaces of the thick interlayer films. Due to a decrease of maximum electric-field intensity and a narrow distribution of high electric field, the on/off current ratio of vertical-offset TFTs is about three orders of magnitude higher than that of conventional TFTs.