Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a Photonic Quasi-Crystal Overgrowth

摘要

GaN-based LEDs with a $hbox{SiO}_{2}$ oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III $(d =break hbox{1.2} muhbox{m})$ was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a $hbox{SiO}_{2}$ oxide PQC structure on an n-GaN layer.