Organic-Transistor-Based Nano-Floating-Gate Memory Devices Having Multistack Charge-Trapping Layers

摘要

Nano-floating-gate memory devices having multistack charge-trapping layers are developed. Controlled gold nanoparticles encapsulated with polyelectrolytes are used as charge-trapping elements. Programmable memory characteristics are observed according to the programming/erasing operations in pentacene-based organic-transistor memory devices. The memory window can be increased effectively by the adoption of multistack charge-trapping layers. The data-retention measurement shows that the programmed/erased states are maintained relatively well according to the time elapsed. This letter is based on simple solution processes at low temperature, so it has a potential use in fabricating nano-floating-gate memory devices on plastic substrates.