Three-Dimensional Stackable Electromechanical Nonvolatile Memory Cell (H Cell) for Four-Bit Operation

摘要

A novel H-cell design has been proposed and successfully demonstrated. To the best of the author's knowledge, it is the first CMOS-compatible electromechanical nonvolatile memory that shows the feasibility of 4-bit operation experimentally. The fabricated prototype H cell shows a reasonable performance, except for the endurance property that will be overcome by reducing the cell size and introducing a new beam material. The H cell can be used for high-density and low-power 3-D stackable electromechanical nonvolatile memory.