Application of Post-$hbox{HfO}_{2}$ Fluorine Plasma Treatment for Improvement of $hbox{In}_{0.53}hbox{Ga}_{0.47} hbox{As}$ MOSFET Performance

摘要

Notable improvements in the $hbox{HfO}_{2}/hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}$ gate stack have been achieved by a post- $hbox{HfO}_{2}$ fluorine plasma treatment, including excellent interface quality of low-equivalent-oxide-thickness $hbox{HfO}_{2}$ (1.4 nm) directly on $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ with no interface passivation layer, over five-times reduction in interface trap density from $ hbox{2.8} times hbox{10}^{12}$ to $hbox{4.9} times hbox{10}^{11} hbox{cm}^{-2}cdothbox{eV}^{-1}$, improved subthreshold swing from 127 to 109 mV/dec, and reduced $I_{d}$– $V_{g}$ hysteresis in pulsed $I_{d}$– $V_{g}$ measurement. Consequently, improved electrical performances have been achieved in 29% higher effective channel mobility and 29% higher drive current.