Low-Voltage Electric-Double-Layer TFTs on $ hbox{SiO}_{2}$-Covered Paper Substrates

摘要

Low-voltage electric-double-layer (EDL) thin-film transistors (TFTs) have been fabricated on paper substrates at room temperature. The devices operated in depletion mode, and the resistivity of the Indium-Tin-Oxide (ITO) channel layer is measured to be 24 $Omegacdothbox{cm}$. An $hbox{SiO}_{2}$ film deposited by plasma-enhanced chemical-vapor deposition method is used as the buffer layer to improve the smoothness of the paper substrate. TFTs on the $hbox{SiO}_{2}$-covered paper substrates show a saturation filed-effect mobility of 14.6 $hbox{cm}^{2}hbox{V}^{-1}hbox{s}^{-1}$ , a subthreshold swing of 100 mV/dec, and a drain-current on/off ratio of $hbox{1.5} times hbox{10}^{6}$, which are much better than that of the devices on bare paper substrates. Such EDL TFTs on paper substrates with an $hbox{SiO}_{2}$ buffer layer have potential application in portable sensors.