Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors

摘要

This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley–Read–Hall generation mechanism at oxide interfaces. The role of oxide defects is discriminated thanks to the use of ionizing radiations. A dedicated RTS detection technique and several test conditions (radiation dose, temperature, integration time, photodiode bias) reveal the particularities of this novel source of RTS.