I-Gate Body-Tied Silicon-on-Insulator MOSFETs With Improved High-Frequency Performance

摘要

A new body-tied (BT) (I-gate) silicon-on-insulator transistor with comparable $f_{T}$ and $f_{max}$ as those of floating-body transistors and comparable analog performance as those of T-gate BT transistors is demonstrated. The structure is fabricated without process modifications by selectively blocking silicide formation and source/drain implant in a foundry technology.