Ultrahigh on/off -Current Ratio for Resistive Memory Devices With Poly(N-Vinylcarbazole)/Poly(3, 4-Ethylenedioxythiophene)–Poly(Styrenesulfonate) Stacking Bilayer

摘要

An ultrahigh on/off -current ratio of $hbox{5} times hbox{10}^{9}$ is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene)–poly(styrenesulfonate) (PEDOT–PSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the on/off-current ratio cannot be achieved by simply increasing the thickness of the PVK:Au NPs layer itself. This PVK:Au-NPs/PEDOT–PSS stacking-bilayer memory device also demonstrates good retention of high on /off-current ratio for at least 2 h and remains programmable at 125 $^{circ}hbox{C}$.