Bipolar resistive switching device based on N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine and poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/poly(vinyl alcohol)bilayer stacked structure

摘要

We propose a novel bilayer resistive switching device based on N,N-bis (3-methylphenyl)-N,N-diphenylbenzidine (TPD) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)/poly(vinyl alcohol) (PEDOT:PSS/PVOH) composite. The bilayer structure of TPD and (PEDOT:PSS/PVOH) is fabricated on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrate through all-printed technology. Here, the ITO acts as a bottom electrode and the top electrode is patterned using silver (Ag) epoxy. The fabricated device has a high resistance state (HRS) of 97.23k and a low resistance state (LRS) of 3.38k at read voltage of 0.58V, which achieved R-off/R-on resistance ratio of 28.7. The proposed device maintained its stability for more than 300 endurance cycles and retention time of more than 10(4)s. To ensure the resistive switching behavior, the proposed resistive memory device is electrically and mechanically tested. To conform the proper fabrication, FESEM is used for the surface morphology and cross section. The results suggest that the proposed device can be used in future printed resistive switching devices.