Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit

摘要

A nonplanar Flash memory architecture with ultrahigh-density $(sim!! hbox{1.5} times hbox{10}^{12} hbox{cm}^{-2})$ NiSi nanocrystals (NCs) as the floating gate is demonstrated using a triangular-shaped Si nanowire array as the memory transistor channel. The memory device shows good programming, erasing, and retention characteristics. This result suggests that nonplanar devices can extend NC memory scaling limit.