$hbox{HfO}_{2}$-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior

摘要

In this letter, $hbox{HfO}_{2}$-based RRAM with varying device sizes is discussed with an analysis of the device-size dependence on reset current $(I_{rm reset})$. Device sizes down to 60 nm were achieved by using different thicknesses of nitride spacer after 200-nm contact hole is formed. Platinum (Pt) bottom electrode and titanium nitride (TiN) top electrode were used with $hbox{HfO}_{2}$ dielectric as the resistance switching layer. Uniform bipolar switching characteristics with a very low $I_{rm reset}$ of about 100 $ muhbox{A}$ are achieved in 60-nm contact size devices. Self-compliance effect is also observed in the scaled devices.