Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening Length

摘要

This letter describes an asymmetric gate tunnel field-effect transistor (AG-TFET) with a gate-all-around (GAA) structure in the source and a planar structure in the drain. It has a low OFF-state current (6.55 $,times 10^{-16}~{rm A}/mu{rm m}$) and a high ON-state current (2.47$,times 10^{-5}~{rm A}/mu{rm m}$) because the screening length $lambda$ of a GAA nanowire structure is half that of the planar structure. Simulations reveal that a subthreshold swing as low as 42 mV/decade and an ON/OFF current ratio as high as $10^{10}$ are realized. The AG-TFET is easily fabricated as an actual device by simply changing the layout of gate in a general TFET fabrication.