Improved Rear-Side Passivation by Atomic Layer Deposition Stack Layers for High Industrial -Type Silicon Solar Cells

摘要

This research develops high open-circuit voltage $(V_{rm OC})p$ -type industrial screen-printed silicon solar cells using improved rear surface passivation. It shows a significant improvement in the minority carrier lifetime by low temperature $({<}{rm 450}^{circ}{rm C})$ thermal atomic layer deposition of ${rm Al}_{2}{rm O}_{3}$ layers and plasma-enhanced chemical vapor deposition of ${rm SiN}_{x}$ passivation layers. An increase in the $V_{rm OC}$ and the short-circuit current $(J_{rm SC})$ due to an improved long-wavelength response are also demonstrated. With the optimized stack layers, a high efficiency of 19.2% across a large area (156 ${rm cm}^{2}$) is seen. Furthermore, the rear-side passivation scheme can be easily integrated into the conventional screen-printed process. This is very promising for in-line solar cell manufacturing.