Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

摘要

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier ${rm In}_{0.11}{rm Al}_{0.72}{rm Ga}_{0.17}{rm N}/{rm GaN}$ heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 ${rm cm}^{2}/{rm V}cdot {rm s}$, which is the highest value ever reported on In-containing GaN-based HEMTs. For T-shaped gate transistor with a gate length of 75 nm, current gain $({rm f}_{t})$ and power gain $({rm f}_{max})$ cutoff frequencies of 113 and 200 GHz are extracted from S-parameter measurements, respectively. Nonlinear characterization of a T-shaped gate device with a gate length of 225 nm gives an output power density of 2 W/mm at 40 GHz. These results clearly demonstrate the capabilities of such quaternary barrier-based devices.