$hbox{Ni/GeO}_{x}hbox{/TiO}_{y}hbox{/TaN}$ RRAM on Flexible Substrate With Excellent Resistance Distribution

摘要

Excellent device-to-device distribution was achieved in high-performance $ hbox{Ni/GeO}_{x}hbox{/TiO}_{y}hbox{/TaN}$ resistive random access memory on low-cost flexible plastics, with low 30-$muhbox{W}$ switching power (9 $muhbox{A}$ at 3 V; $- hbox{1} muhbox{A}$ at $-$3 V), $hbox{10}^{5}$ cycling endurance, and good retention at 85 $^{circ}hbox{C}$. These were ascribed to bulk transport property by tunneling between traps, forming-free resistive switching, and the less destructive low power switching.