A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT

摘要

A new high-performance normally-off gallium nitride (GaN)-based metal–oxide–semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al_0.25Ga_0.75N) barrier layer and relies on an induced two-dimensional electron gas for operation is presented. Single finger devices were fabricated using 10 and 20 nm plasma-enhanced chemical vapor-deposited silicon dioxide (SiO₂) as the gate dielectric. They demonstrated threshold voltages (V (_{mathrm {mathbf {th}}}) ) of 3 and 2 V, and very high maximum drain currents (I (_{mathrm {mathbf {DSmax}}}) ) of over 450 and 650 mA/mm, at a gate voltage (V (_{mathrm {mathbf {GS}}}) ) of 6 V, respectively. The proposed device is seen as a building block for future power electronic devices, specifically as the driven device in the cascode configuration that employs GaN-based enhancement-mode and depletion-mode devices.