Low-Noise Avalanche Photodiode With Graded Junction in 0.15- $mu{rm m}$ CMOS Technology

摘要

This letter presents the experimental characterization and noise modeling of a CMOS avalanche photodiode with pwell-iso active junction fabricated in a 0.15- $mu{rm m}$ standard CMOS process. The device exhibits a remarkably low excess noise factor $F=6$ at a gain $M={50}$ in the blue spectral region, and $F={12}$ at $M={50}$ in the near-infrared. Gain and noise characteristics are accurately predicted using Hayat dead-space model applied to a linearly graded junction doping profile.