Resistive Switching Performance Improvement of ${rm Ta}_{2}{rm O}_{5-x}/{rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${rm AlO}_{delta}$ Barrier Layer

摘要

By inserting a thin ${rm AlO}_{delta}$ barrier layer between the electrode and tantalum oxide resistive switching layer, the triple-layer ReRAM devices with improved resistive switching performance are demonstrated. Pulsed programming measurements without external current compliance show $10^{11}$ cycle endurance without performance degradation. The ON/OFF ratio exceeds 1000. Low operation current is achieved using a smaller SET compliance current. Multilevel states are obtained through adjusting SET and RESET conditions, and retention longer than $10^{4}$ s at 125$^{circ}{rm C}$ is reported.