Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal–Organic Chemical Vapor Deposition Grown In₂O₃ Channel Treated by Oxygen Microwave Plasma

摘要

In this letter, thin-film transistors (TFTs) were demonstrated with InO channel layer prepared by metal–organic chemical vapor deposition (MOCVD). Treated by O microwave plasma on the InO channel, high performance was obtained such as ultra-high field-effect mobility of 243 cm/Vs, ON/OFF current ratio of , and high stability under negative bias illumination stress, although no typical electrical characteristics were observed for TFTs without O microwave plasma treatment. The effects of O microwave plasma treatment were investigated by Hall effect measurements, X-ray photoelectron spectroscopy, and Kelvin probe force microscopy. The results indicated that the O microwave plasma treatment leads to the oxygen ions adsorption onto the InO surface and the consequent depletion of InO channel. The MOCVD-grown InO TFTs with ultra-high field-effect mobility are potentially applied in the next-generation system on panel.