机译:通过采用混合脉冲方案进行神经形态计算的基于TiOx的具有64级电导和对称电导变化的RRAM突触
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea;
Switches; Pattern recognition; Programming; Neuromorphics; Neurons; Electrodes; Biological neural networks;
机译:改进的神经形态系统1T2R突触设备的电导线性和电导率
机译:磁畴壁型旋转函数模拟神经形态计算的线性和对称电导响应
机译:基于W / WO_(3-X)的三端突触设备,具有线性电导变化和高开/关比,适用于神经形态应用
机译:受控制的灯丝诱导的HfO2 RRAM阵列在神经形态应用中的多级电导转换
机译:利用具有缺陷容忍性神经形态系统的升压因子调整方案的缺陷RRAM阵列作为HTM空间池的突触
机译:利用有缺陷因子调整方案的HTM空间排除器的突触的缺陷RRAM阵列,用于缺陷耐受性神经形式系统
机译:基于忆阻器的神经形态计算架构突触设计与训练方案。