Linear and symmetric conductance response of magnetic domain wall type spin- memristor for analog neuromorphic computing

摘要

We developed a three-terminal spintronic memristor named spin-memristor for the artificial synapse of neuromorphic devices. Current-induced domain wall (DW) motion type magnetoresistance was used to generate variable analog conductance changes. Magnetic tunnel junction with a perpendicularly magnetized DW layer was fabricated on a silicon substrate. Due to the forward and backward DW motions, a linear and symmetric conductance response was achieved. The impact of memristive behavior on neural networks was evaluated using numerical simulation of hand-written digit recognition. This spin-memristor is identified as one of the promising candidates for artificial synapses in analog neuromorphic devices.