High Mobility n-Channel Organic Field-Effect Transistor Based a Tetratetracontane Interfacial Layer on Gate Dielectrics

摘要

Field-effect mobility, especially for n-channel organic field-effect transistors (OFETs), is still the most challenging issue that should be overcome for realizing commercial application of organic electronics in the near future. In this letter, we demonstrate high mobility n-channel OFETs by inserting a tetratetracontane (TTC) interfacial layer between C60 and dielectrics. The surface morphologies of the TTC films have an important influence on the mobility of OFETs. As a result, a very high electron mobility of 13.6 cm2/Vs was achieved in the C60-based OFET with a TTC passivating polyvinyl alcohol gate dielectric, which is the highest value reported to date in the C60-based OFET devices.